Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile-Strained Film-Reference-Cited by-同舟云学术

Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile-Strained Film

Published:2017-03-15 Issue:4 Volume:3 Page:1600508
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Li Linglong¹²,Cao Ye¹,Somnath Suhas¹,Yang Yaodong²,Jesse Stephen¹,Ehara Yoshitaka³⁴,Funakubo Hiroshi³⁴,Chen Long-Qing⁵,Kalinin Sergei V.¹,Vasudevan Rama K.¹

Affiliation:

1. Institute for Functional Imaging of Materials and Center for Nanophase Materials Sciences; Oak Ridge National Laboratory; Oak Ridge TN 37831 USA

2. Frontier Institute of Science and Technology; State Key Laboratory for Mechanical Behavior of Materials; Xi'an Jiaotong University; Xi'an Shaanxi 710049 China

3. Department of Innovative and Engineered Materials; Department of Material Science and Engineering; Tokyo Institute of Technology; Yokohama 226-8502 Japan

4. School of Materials and Chemical Technology; Tokyo Institute of Technology; Yokohama 226-8502 Japan

5. Department of Materials Science and Engineering; Pennsylvania State University; State College PA 16801 USA

Funder

Japan Society for the Promotion of Science

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference54 articles.

1. A Cosmic Microwave Background Feature Consistent with a Cosmic Texture

2. Polarized X-ray scattering reveals non-crystalline orientational ordering in organic films