Abstract
AbstractSpatially resolved time and voltage-dependent polarization dynamics in PbTiO3 thin films is explored using dynamic piezoresponse force microscopy (D-PFM) in conjunction with interferometric displacement sensing. This approach gives rise to 4D data sets containing information on bias-dependent relaxation dynamics at each spatial location without long-range electrostatic artifacts. To interpret these data sets in the absence of defined physical models, we employ a non-negative tensor factorization method which clearly presents the data as a product of simple behaviors allowing for direct physics interpretation. Correspondingly, we perform phase-field modeling finding the existence of ‘hard’ and ‘soft’ domain wall edges. This approach can be extended to other multidimensional spectroscopies for which even exploratory data analysis leads to unsatisfactory results due to many components in the decomposition.
Publisher
Springer Science and Business Media LLC
Subject
Computer Science Applications,Mechanics of Materials,General Materials Science,Modeling and Simulation
Reference73 articles.
1. Waser, R. Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices (John Wiley & Sons, Inc., 2003).
2. Tsymbal, E. Y. & Kohlstedt, H. Applied physics—tunneling across a ferroelectric. Science 313, 181–183 (2006).
3. Maksymovych, P. et al. Polarization control of electron tunneling into ferroelectric surfaces. Science 324, 1421–1425 (2009).
4. Gruverman, A. et al. Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale. Nano Lett. 9, 3539–3543 (2009).
5. Miller, S. L. & McWhorter, P. J. Physics of the ferroelectric nonvolatile memory field-effect transistor. J. Appl. Phys. 72, 5999–6010 (1992).
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