PbSe Nanorod Field-Effect Transistors: Room- and Low-Temperature Performance-Reference-Cited by-同舟云学术

PbSe Nanorod Field-Effect Transistors: Room- and Low-Temperature Performance

Published:2018-02-01 Issue:3 Volume:4 Page:1700580
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Han Lu¹²,Balazs Daniel M.¹^ORCID,Shulga Artem G.¹,Abdu-Aguye Mustapha¹,Ma Wanli²,Loi Maria Antonietta¹^ORCID

Affiliation:

1. Zernike Institute for Advanced Materials University of Groningen; Nijenborgh 4 Groningen 9747 AG The Netherlands

2. Institute of Functional Nano and Soft Materials (FUNSOM) Soochow University; 199 Ren-Ai Road, Suzhou Industrial Park Suzhou Jiangsu 215123 P. R. China

Funder

European Research Council

National Key Research Projects

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

China Scholarship Council

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference47 articles.

1. Hybrid organic–inorganic inks flatten the energy landscape in colloidal quantum dot solids

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4. High-efficiency quantum-dot light-emitting devices with enhanced charge injection

5. High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors

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