Solution-Processed Vertical Field-Effect Transistor with Separated Charge Generation and Charge Transport Layers for High-Performance Near-Infrared Photodetection-Reference-Cited by-同舟云学术

Solution-Processed Vertical Field-Effect Transistor with Separated Charge Generation and Charge Transport Layers for High-Performance Near-Infrared Photodetection

Published:2020-12-09 Issue:12 Volume:2 Page:3871-3879
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Subramanian Alagesan¹^ORCID,Hussain Sajid¹,Din Nasrud¹,Abbas Ghulam²,Shuja Ahmed³,Lei Wei¹,Chen Jing¹^ORCID,Khan Qasim²⁴^ORCID,Musselman Kevin⁴^ORCID

Affiliation:

1. Joint International Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China

2. College of Electronic Science and Technology, Shenzhen University, Shenzhen 518000, China

3. Centre for Advanced Electronics & Photovoltaic Engineering, International Islamic University, Islamabad 44000, Pakistan

4. Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada

Funder

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials