High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors-Reference-Cited by-同舟云学术

High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors

Published:2015-02-17 Issue:12 Volume:27 Page:2107-2112
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Nugraha Mohamad Insan¹²,Häusermann Roger²,Bisri Satria Zulkarnaen¹,Matsui Hiroyuki²,Sytnyk Mykhailo³,Heiss Wolfgang³,Takeya Jun²,Loi Maria Antonietta¹

Affiliation:

1. Zernike Institute for Advanced Materials; University of Groningen; Nijenborgh 4 Groningen 9747AG The Netherlands

2. Department of Advanced Materials Science; School of Frontier Sciences; The University of Tokyo; 5-1-5 Kashiwanoha Kashiwa Chiba 277-8561 Japan

3. Institute for Semiconductor and Solid State Physics; University of Linz; Altenbergerstr. 69 Linz 4040 Austria

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference41 articles.

1. Improved performance and stability in quantum dot solar cells through band alignment engineering

2. 5.2% efficient PbS nanocrystal Schottky solar cells

3. PbS nanocrystal solar cells with high efficiency and fill factor

4. Temperature dependent photoresponse from colloidal PbS quantum dot sensitized inorganic/organic hybrid photodiodes

5. Solution-Processable Near-IR Photodetectors Based on Electron Transfer from PbS Nanocrystals to Fullerene Derivatives

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