Impact of the Gate Dielectric on Contact Resistance in High‐Mobility Organic Transistors-Reference-Cited by-同舟云学术

Impact of the Gate Dielectric on Contact Resistance in High‐Mobility Organic Transistors

Published:2019-03-14 Issue:5 Volume:5 Page:1800723
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Paterson Alexandra F.¹,Mottram Alexander D.²,Faber Hendrik¹,Niazi Muhammad R.¹,Fei Zhuping³,Heeney Martin³,Anthopoulos Thomas D.¹^ORCID

Affiliation:

1. King Abdullah University of Science and Technology (KAUST)KAUST Solar Centre (KSC) Thuwal 23955‐6900 Saudi Arabia

2. Department of Materials Science and EngineeringSchool of Molecular Science and EngineerVidyasirimedhi Institute of Science and Technology (VISTEC) Rayong 21210 Thailand

3. Department of Chemistry and Centre for Plastic ElectronicsImperial College London South Kensington London SW7 2AZ UK

Funder

King Abdullah University of Science and Technology

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800723

Reference69 articles.

1. Recent Progress in High-Mobility Organic Transistors: A Reality Check

2. 25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

3. Essential Effects on the Mobility Extraction Reliability for Organic Transistors

4. Doping: A Key Enabler for Organic Transistors

5. Recent progress in printable organic field effect transistors

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