Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric Hf x Zr 1− x O 2 Thin Films through Interfacial Bound Charges-Reference-Cited by-同舟云学术

Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric Hf x Zr 1− x O 2 Thin Films through Interfacial Bound Charges

Published:2019-06-26 Issue:8 Volume:5 Page:1900554
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Zhu Ying¹,Ning Hongkai¹,Yu Zhihao¹^ORCID,Pan Qiang²,Zhang Chunchen³,Luo Chen⁴,Tu Xuecou¹,You Yumeng²,Wang Peng³,Wu Xing⁴,Shi Yi¹,Wang Xinran¹^ORCID

Affiliation:

1. National Laboratory of Solid State MicrostructuresSchool of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced MicrostructuresNanjing University Nanjing 210093 China

2. Ordered Matter Science Research CenterSoutheast University Nanjing 211189 China

3. Jiangsu Key Laboratory of Artificial Functional MaterialsCollege of Engineering and Applied SciencesNanjing University Nanjing 210093 China

4. Shanghai Key Laboratory of Multidimensional Information ProcessingDepartment of Electronic EngineeringEast China Normal University 500 Dongchuan Road Shanghai 200241 China

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Natural Science Foundation of Jiangsu Province

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900554

Reference41 articles.

1. The End of Moore's Law: A New Beginning for Information Technology