Resistive Switching Effect with ON/OFF Current Relation up to 10 9 in 2D Printed Composite Films of Fluorinated Graphene with V 2 O 5 Nanoparticles-Reference-Cited by-同舟云学术

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Resistive Switching Effect with ON/OFF Current Relation up to 10 9 in 2D Printed Composite Films of Fluorinated Graphene with V 2 O 5 Nanoparticles

Published:2019-08-22 Issue:10 Volume:5 Page:1900310
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Ivanov Artem I.¹^ORCID,Gutakovskii Anton K.¹²^ORCID,Kotin Igor A.¹^ORCID,Soots Regina A.¹^ORCID,Antonova Irina V.¹²³^ORCID

Affiliation:

1. Rzhanov Institute of Semiconductor Physics SB RAS Lavrentiev av. 13 Novosibirsk 630090 Russia

2. Department of PhysicsNovosibirsk State University Novosibirsk 630090 Russia

3. Department of Radio Engineering and ElectronicsNovosibirsk State Technical University Novosibirsk 630073 Russia

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900310

Reference66 articles.

1. Resistance random access memory

2. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

3. Polymer memristor for information storage and neuromorphic applications

4. Graphene and Related Materials for Resistive Random Access Memories

5. Novel concepts in functional resistive switching memories

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1. Printed Memristors: An Overview of Ink, Materials, Deposition Techniques, and Applications;Advanced Electronic Materials;2024-08-02

2. Solution-processed memristors: performance and reliability;Nature Reviews Materials;2024-04-12

3. Engineering lattice oxygen defects and polaronic transport in vanadium pentoxide via isovalent phosphorus doping;Applied Physics Letters;2023-11-27

4. The effect of oxygen affinity electrode Ti on the performance of vanadium oxide-based valence change resistive random access memory;Vacuum;2023-03

5. Printed Electronics Based on 2D Material Inks: Preparation, Properties, and Applications toward Memristors;Small Methods;2023-01-06

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