Affiliation:
1. School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram , Thiruvananthapuram 695551, Kerala, India
Abstract
Oxygen vacancies are equilibrium defects in the vanadium pentoxide system that give rise to polaronic hopping transport via V4+ charge compensating defect. In this paper, we report the tunability of polaron formation, the hopping process, and their magnetic signature by substitution of isovalent (5+) phosphorus ions in the V5+ site. The powder x-ray diffraction data show a monotonous shift in lattice parameters with progressive P-doping, confirming the presence of a substitutional dopant. The polaron hopping energy reduced from 0.307 to 0.290 eV depicting a lower defect concentration in P-doping in V2O5. At low temperatures, it is found to obey the Efros–Shklovskii variable range hopping mechanism. The estimated hopping range increased to 1.6 ± 0.1 nm in doped V2O5 in contrast to ∼1.3 nm in the undoped one. The electron spin resonance measurements show a diminishing broad ferromagnetic signal and rising paramagnetic signal (g = 1.97) with progressive P-doping depicting predominant isolated electronic spins in the doped sample. The same is corroborated in room temperature M–H with a distinct hysteresis that diminishes with P-doping and a rise of a paramagnetic slope. Moreover, the reduced oxygen defects and lower V4+ relative occupancy together with fermi level fall toward intrinsic position are substantiated by photoelectron emission studies.
Funder
Science and Engineering Research Board
Subject
Physics and Astronomy (miscellaneous)
Cited by
4 articles.
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