The effect of oxygen affinity electrode Ti on the performance of vanadium oxide-based valence change resistive random access memory

Author:

Li Wentao,Tuo Yibo,Mi Wei,Wang Di,Wang Meng,Zhou LiweiORCID,Zhao Jinshi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference47 articles.

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5. 2021 IEEE 21st International Conference on Nanotechnology (NANO) Implementation of Sub-filamentary Network-Based Variability Model for Ta2O5/TaOx RRAM;Lekshmi,2021

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