Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation-Reference-Cited by-同舟云学术

Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation

Published:2013-09-30 Issue:5-6 Volume:27 Page:822-833
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Chen Yongbo¹,Xu Ruimin¹

Affiliation:

1. EHF Key Laboratory of Fundamental Science, School of Electronic Engineering; University of Electronic Science and Technology of China; Chengdu 611731 China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference39 articles.

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4. Double-gate silicon-on-insulator transistor with volume inversion: a new device with greatly enhanced performance;Balestra;IEEE Electron Device Lett,1987

5. Silicon on insulator technologies and devices: from present to future;Cristoloveanu;Solid-State Electron,2001

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