Ambient‐Stable 2D Dion–Jacobson Phase Tin Halide Perovskite Field‐Effect Transistors with Mobility over 1.6 Cm2 V−1 s−1

Abstract

AbstractSolution‐processed metal halide perovskites hold immense potential for the advancement of next‐generation field‐effect transistors (FETs). However, the instability of perovskite‐based transistors has impeded their progress and practical applications. Here, ambient‐stable high‐performance FETs based on 2D Dion–Jacobson phase tin halide perovskite BDASnI4, which has high film quality and excellent electrical properties, are reported. The perovskite channels are established by engineering the film crystallization process via the employment of ammonium salt interlayers and the incorporation of NH4SCN additives within the precursor solution. The refined FETs demonstrate field‐effect hole mobilities up to 1.61 cm2 V−1 s−1 and an on/off ratio surpassing 106. Moreover, the devices show impressive operational and environmental stability and retain their functional performance even after being exposed to ambient conditions with a temperature of 45 °C and humidity of 45% for over 150 h.