A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors

Author:

Senanayak Satyaprasad P.12ORCID,Abdi-Jalebi Mojtaba13ORCID,Kamboj Varun S.1,Carey Remington1ORCID,Shivanna Ravichandran1ORCID,Tian Tian45,Schweicher Guillaume1ORCID,Wang Junzhan1,Giesbrecht Nadja6,Di Nuzzo Daniele1ORCID,Beere Harvey E.1ORCID,Docampo Pablo67ORCID,Ritchie David A.18ORCID,Fairen-Jimenez David4,Friend Richard H.1ORCID,Sirringhaus Henning1ORCID

Affiliation:

1. Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK.

2. CSIR- Institute of Minerals and Materials Technology Council of Scientific & Industrial Research, Bhubaneswar–751 013, Odisha, India.

3. Institute for Materials Discovery, University College London, Torrington Place, London WC1E 7JE, UK.

4. Adsorption and Advanced Materials (AAM) Laboratory, Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, UK.

5. Department of Chemical Engineering, Imperial College London, South Kensington Campus, London SW7 2AZ, UK.

6. Department Chemie, Ludwig-Maximilians-Universität-München, Butenandtstr, München, Germany.

7. School of Mathematics, Statistics and Physics, Newcastle University, Herschel Building, Newcastle upon Tyne NE1 7RU, UK.

8. Department of Physics, Swansea University, Sketty, Swansea SA2 8PQ, UK.

Abstract

Hysteresis-free operational stable perovskite FETs is demonstrated through ionic passivation and crystal modification.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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