Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe-Reference-Cited by-同舟云学术

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Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe

Published:2022-05-12 Issue:24 Volume:34 Page:2200323
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Clark Oliver J.¹,Wadgaonkar Indrajit²,Freyse Friedrich¹³,Springholz Gunther⁴,Battiato Marco²,Sánchez‐Barriga Jaime¹⁵^ORCID

Affiliation:

1. Helmholtz‐Zentrum Berlin für Materialien und Energie Elektronenspeicherring BESSY II, Albert‐Einstein‐Str. 15 12489 Berlin Germany

2. Nanyang Technological University Nanyang Link 21 Singapore 637371 Singapore

3. Institut für Physik und Astronomie Universität Potsdam Karl‐Liebknecht‐Str. 24/25 14476 Potsdam Germany

4. Institut für Halbleiter‐ und Festkörperphysik Johannes Kepler Universität A‐4040 Linz Austria

5. IMDEA Nanoscience C/ Faraday 9, Campus de Cantoblanco Madrid 28049 Spain

Funder

Austrian Science Fund

Nanyang Technological University

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202200323

Reference70 articles.

1. Spintronics: Fundamentals and applications

2. Coherent spin manipulation without magnetic fields in strained semiconductors

3. Challenges for semiconductor spintronics

4. Quantum Spin Hall Insulator State in HgTe Quantum Wells

5. A new moment for Berry

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous lattice thermal conductivity increase with temperature in cubic GeTe correlated with strengthening of second-nearest neighbor bonds;Nature Communications;2024-08-14

2. Space‐Confined Growth of Ultrathin P‐Type GeTe Nanosheets for Broadband Photodetectors;Small;2024-03-08

3. Nontrivial Topological Surface States in Ru₃Sn₇ toward Wide pH‐Range Hydrogen Evolution Reaction;Advanced Materials;2023-04-29

4. Abnormal behavior of preferred formation of the cationic vacancies from the interior in a γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state;Nanoscale Horizons;2023

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