Abnormal behavior of preferred formation of the cationic vacancies from the interior in a γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state-Reference-Cited by-同舟云学术

Abnormal behavior of preferred formation of the cationic vacancies from the interior in a γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state

Published:2023 Issue:3 Volume:8 Page:404-411
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Huan Changmeng¹²^ORCID,Cai Yongqing³^ORCID,Kripalani Devesh R.⁴,Zhou Kun⁴^ORCID,Ke Qingqing¹²

Affiliation:

1. School of Microelectronics Science and Technology, Sun Yat-sen university, Zhuhai 519082, China

2. Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, Sun Yat-sen University, Zhuhai 519082, China

3. Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China

4. School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

Abstract

Abnormal behavior of the cationic vacancies in a γ-GeSe monolayer, originated from the stereo-chemical antibonding lone-pair state near the valence band maximum, is promising in the application of memristors.

Funder

Natural Science Foundation of Guangdong Province

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong Province

Sun Yat-sen University

Universidade de Macau

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NH/D2NH00573E