Molecular Dopant‐Dependent Charge Transport in Surface‐Charge‐Transfer‐Doped Tungsten Diselenide Field Effect Transistors-Reference-Cited by-同舟云学术

Molecular Dopant‐Dependent Charge Transport in Surface‐Charge‐Transfer‐Doped Tungsten Diselenide Field Effect Transistors

Published:2021-09-17 Issue:44 Volume:33 Page:2101598
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kim Jae‐Keun¹²,Cho Kyungjune²³,Jang Juntae¹,Baek Kyeong‐Yoon¹,Kim Jehyun¹,Seo Junseok¹,Song Minwoo¹,Shin Jiwon¹,Kim Jaeyoung¹,Parkin Stuart S. P.²^ORCID,Lee Jung‐Hoon⁴,Kang Keehoon⁵^ORCID,Lee Takhee¹^ORCID

Affiliation:

1. Department of Physics and Astronomy and Institute of Applied Physics Seoul National University Seoul 08826 Korea

2. Max‐Planck Institute of Microstructure Physics Weinberg 2 06120 Halle (Saale) Germany

3. Soft Hybrid Materials Research Center Korea Institute of Science and Technology Seoul 02792 Korea

4. Computational Science Research Center Korea Institute of Science and Technology Seoul 02792 Korea

5. Department of Materials Science & Engineering Yonsei University Seoul 03722 Korea

Funder

National Research Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202101598

Reference54 articles.

1. Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors

2. Two-dimensional semiconductors for transistors

3. Two‐Dimensional Semiconductors: From Materials Preparation to Electronic Applications

4. Recent Advances in Interface Engineering of Transition-Metal Dichalcogenides with Organic Molecules and Polymers

5. MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

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