Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors-Reference-Cited by-同舟云学术

Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors

Published:2019-06-26 Issue:24 Volume:6 Page:1900220
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Li Henan¹,Huang Jing‐Kai²,Shi Yumeng³^ORCID,Li Lain‐Jong²^ORCID

Affiliation:

1. Institute of Microscale OptoelectronicsShenzhen University Shenzhen 518060 China

2. School of Materials Science and EngineeringUniversity of New South Wales NSW 2052 Australia

3. Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong ProvinceInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsShenzhen University Shenzhen 518060 China

Funder

National Natural Science Foundation of China

Science, Technology and Innovation Commission of Shenzhen Municipality

Department of Education of Guangdong Province

Shenzhen Peacock Plan

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201900220

Reference123 articles.