Tunable band gaps and high carrier mobilities in germanene by Si doping in the presence of an external electric field: Field effect transistors-Reference-Cited by-同舟云学术

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Tunable band gaps and high carrier mobilities in germanene by Si doping in the presence of an external electric field: Field effect transistors

Published:2024-06 Issue: Volume:682 Page:415859
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Xiao Meixia^ORCID,Yin Xuwen,Song Haiyang,Lv Ying,Xiao Beibei

Publisher

Elsevier BV

Reference57 articles.

1. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

2. Silicene: a review of recent experimental and theoretical investigations;Houssa;J. Phys. Condens. Matter,2015

3. Quantum spin Hall effect in silicene and two-dimensional germanium;Liu;Phys. Rev. Lett.,2011

4. Beyond graphene: chemistry of group 14 graphene analogues: silicene, germanene, and stanene;Hartman;ACS Nano,2019

5. Density functional theory investigation on selective adsorption of VOCs on borophene;Li;Chin. Chem. Lett.,2021

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