Charge–Ferroelectric Transition in Ultrathin Na 0.5 Bi 4.5 Ti 4 O 15 Flakes Probed via a Dual‐Gated Full van der Waals Transistor-Reference-Cited by-同舟云学术

Charge–Ferroelectric Transition in Ultrathin Na 0.5 Bi 4.5 Ti 4 O 15 Flakes Probed via a Dual‐Gated Full van der Waals Transistor

Published:2020-11-03 Issue:49 Volume:32 Page:2004813
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Liu Xiaochi¹,Zhou Xuefan²,Pan Yuchuan¹,Yang Junqiang¹,Xiang Haiyan³,Yuan Yahua¹,Liu Song³,Luo Hang²,Zhang Dou²,Sun Jian¹^ORCID

Affiliation:

1. School of Physics and Electronics Central South University 932 South Lushan Road Changsha 410083 China

2. State Key Laboratory of Powder Metallurgy Central South University Changsha 410083 China

3. Institute of Chemical Biology and Nanomedicine (ICBN) State Key Laboratory of Chemical/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202004813

Reference52 articles.

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3. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

4. Graphene‐Contacted Ultrashort Channel Monolayer MoS 2 Transistors

5. MoS 2 transistors with 1-nanometer gate lengths

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