Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS<sub>2</sub> Field Effect Transistors-Reference-Cited by-同舟云学术

Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS₂ Field Effect Transistors

Published:2024-05-20 Issue:6 Volume:6 Page:4149-4158
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lee Sungwon¹,Wang Xinbiao¹,Shin Hoseong¹,Ali Nasir¹^ORCID,Ngo Tien Dat¹,Hwang Euyheon¹,Kim Gil-Ho¹²^ORCID,Yeom Geun Young¹³^ORCID,Watanabe Kenji⁴^ORCID,Taniguchi Takashi⁴^ORCID,Yoo Won Jong¹^ORCID

Affiliation:

1. SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea

2. School of Electronic and Electrical Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea

3. School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea

4. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00250

Reference49 articles.

1. Mobility Extraction in 2D Transition Metal Dichalcogenide Devices—Avoiding Contact Resistance Implicated Overestimation

2. Intrinsic Limits to Contact Resistivity in Transition Metal Dichalcogenides

3. Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

4. Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

5. Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

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