Modulation of Negative Differential Resistance in Black Phosphorus Transistors-Reference-Cited by-同舟云学术

Modulation of Negative Differential Resistance in Black Phosphorus Transistors

Published:2021-05-16 Issue:25 Volume:33 Page:2008329
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Cheng Ruiqing¹^ORCID,Yin Lei¹,Hu Rui¹,Liu Huijun¹,Wen Yao¹,Liu Chuansheng¹,He Jun¹^ORCID

Affiliation:

1. Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education, and School of Physics and Technology Wuhan University Wuhan 430072 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202008329

Reference39 articles.

1. New Phenomenon in Narrow Germaniump−nJunctions

2. Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors

3. 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

4. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

5. Resonant tunnelling and negative differential conductance in graphene transistors

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