29.2: Invited Paper: Investigation on the Electrical Performance and Stability of InSnZnO Thin‐Film Transistors-Reference-Cited by-同舟云学术

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29.2: Invited Paper: Investigation on the Electrical Performance and Stability of InSnZnO Thin‐Film Transistors

Published:2021-08 Issue:S2 Volume:52 Page:399-399
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Wu Z. D.¹,Liang L. Y.¹,Cao H. T.¹

Affiliation:

1. Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15135

Reference2 articles.

1. Gallium-doped zinc oxide targets fabricated by sintering: Impact of target quality on sputtered thin film properties

2. Defect Self‐Compensation for High‐Mobility Bilayer InGaZnO/In 2 O 3 Thin‐Film Transistor

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