Gallium-doped zinc oxide targets fabricated by sintering: Impact of target quality on sputtered thin film properties-Reference-Cited by-同舟云学术

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Gallium-doped zinc oxide targets fabricated by sintering: Impact of target quality on sputtered thin film properties

Published:2014-11 Issue: Volume:27 Page:1-11
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Liu Jia,Zhang Weijia,Song Dengyuan,Ma Qiang,Zhang Lei,Zhang Hui,Ma Xiaobo,Song Haiyang

Funder

National High-tech Research and Development Projects (863)

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. The effect of thermal annealing and evaporating vacuum level on the performance of a polyfluorene-based polymer light emitting diode

2. Structural and electrical properties of aluminum-doped zinc oxide films prepared by sol–gel process

3. Effect of the [Al/Zn] ratio in the starting solution and deposition temperature on the physical properties of sprayed ZnO:Al thin films

4. Electrical, optical and microstructural properties of transparent conducting GZO thin films deposited by magnetron sputtering

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1. Effect of Ga doping on the structural, optical, and electrical properties of ZnO nanopowders elaborated by sol-gel method;Materials Research Bulletin;2024-10

2. 29.2: Invited Paper: Investigation on the Electrical Performance and Stability of InSnZnO Thin‐Film Transistors;SID Symposium Digest of Technical Papers;2021-08

3. Effect of ball milling on the sintering performance of indium-gallium-zinc oxide ceramics: The diffusion mechanism and lattice distortion of milled powders;Ceramics International;2021-06

4. Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors;IEEE Electron Device Letters;2021-04

5. Fabrication of high-density In2Ga2ZnO7 sputtering target with uniform microstructure;Materials Science in Semiconductor Processing;2021-01

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