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Fabrication of high-density In2Ga2ZnO7 sputtering target with uniform microstructure

  • Published:2021-01 Issue: Volume:121 Page:105342
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Liu Jiang-An,Li Chen-Hui,Zou Yang,Hu Liang,Shi Yu-Sheng

Funder

National Science and Technology Major Project of China

China Postdoctoral Science Foundation

Postdoctoral Scientific Research of Hubei Province

Huazhong University of Science and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference29 articles.

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3. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices;Park;Thin Solid Films,2012

4. Amorphous ZnAlSnO thin-film transistors by a combustion solution process for future displays;Jiang;Appl. Phys. Lett.,2015

5. Recent progress in transparent oxide semiconductors: materials and device application;Hosono;Thin Solid Films,2007

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1. Preparation and properties of InGaZn4O7 ceramic by cold sintering;Ceramics International;2023-09

2. IR Cut-off Film of Target Microsttucture Surface Scattering Parameters;2023 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO);2023-07-31

3. Stability, deoxidation, and sintering characteristics of activated Mo–10%Nb solid-solution powders prepared by mechanical alloying;Journal of Materials Research and Technology;2022-05
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