Temperature-dependent Hall-effect measurements of p-type multicrystalline compensated solar grade silicon-Reference-Cited by-同舟云学术

Temperature-dependent Hall-effect measurements of p-type multicrystalline compensated solar grade silicon

Published:2012-05-24 Issue:7 Volume:21 Page:1469-1477
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Modanese Chiara¹,Acciarri Maurizio²,Binetti Simona²,Søiland Anne-Karin³,Di Sabatino Marisa¹,Arnberg Lars¹

Affiliation:

1. Department of Materials Science and Engineering; NTNU; N-7491; Trondheim; Norway

2. Department of Materials Science, Milano-Bicocca Solar Energy Research Center (MIB-Solar); University of Milano-Bicocca; I-20125; Milano; Italy

3. ELKEM Solar; N-4621; Kristiansand; Norway

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference23 articles.

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2. Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation;Veirman;Solid State Electronics,2010

3. Schindler F Geilker J Kwapil W Giesecke J Schubert MC Warta W Conductivity mobility and Hall mobility in compensated multicrystalline silicon 25th European Photovoltaic Solar Energy Conference 2010 2364 2368

4. Zierer R Gartner G Möller HJ Determination of dopant concentration in UMG-silicon by FTIR spectroscopy, Hall and resistivity measurements 25th European Photovoltaic Solar Energy Conference 2010 1318 1321

5. Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon;Rougieux;Journal of Applied Physics,2010

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