Self-compensation in arsenic doping of CdTe-Reference-Cited by-同舟云学术

Self-compensation in arsenic doping of CdTe

Published:2017-07-04 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Ablekim Tursun^ORCID,Swain Santosh K.,Yin Wan-Jian,Zaunbrecher Katherine,Burst James,Barnes Teresa M.,Kuciauskas Darius,Wei Su-Huai,Lynn Kelvin G.^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-04719-0.pdf

Reference47 articles.

1. Geisthardt, R. M., Topic, M. & Sites, J. R. Status and Potential of CdTe Solar-Cell Efficiency. IEEE Journal of Photovoltaics 5, 1217–1221, doi: 10.1109/JPHOTOV.2015.2434594 (2015).

2. Gessert, T. A. et al. Research strategies toward improving thin-film CdTe photovoltaic devices beyond 20% conversion efficiency. Solar Energy Materials and Solar Cells 119, 149–155, doi: 10.1016/j.solmat.2013.05.055 (2013).

3. Wei, S.-H. Overcoming the doping bottleneck in semiconductors. Computational Materials Science 30, 337–348, doi: 10.1016/j.commatsci.2004.02.024 (2004).

4. Desnica, U. V. Doping limits in II–VI compounds — Challenges, problems and solutions. Progress in Crystal Growth and Characterization of Materials 36, 291–357, doi: 10.1016/S0960-8974(98)00011-4 (1998).

5. Wei, S. H. & Zhang, S. B. Chemical trends of defect formation and doping limit in II–VI semiconductors: The case of CdTe. Physical Review B 66, 10, doi: 10.1103/PhysRevB.66.155211 (2002).

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