Formation of Point Defects Due to Aging under Natural Conditions of Doped GaAs

Abstract

The aging dynamics of materials used to build the active part of optoelectronic devices is a topic of current interest. We studied epitaxial samples of GaAs doped with Ge and Sn up to 1×1019 cm−3, which were stored in a dry and dark environment for 26 years. Photoluminescence spectra were taken in three periods: 1995, 2001 and 2021. In the last year, time-resolved photoluminescence, Raman, and X-ray measurements were also performed to study the evolution of defects formed by the action of O2 in the samples and its correlation with the doping with Ge and Sn impurities. We found that oxygen formed oxides that gave off Ga and As atoms, leaving vacancies mainly of As. These vacancies formed complexes with the dopant impurities. The concentration of vacancies over the 26 years could be as large as 1×1018 cm−3.