Majority Carrier Mobility of Compensated Silicon: Comparison of Room Temperature Measurements and Models

Author:

Zhang Song,Modanese Chiara,Gaspar Guilherme,Søndenå Rune,Tranell Gabriella,Di Sabatino Marisa

Publisher

Elsevier BV

Reference18 articles.

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2. Effect of compensation and of metallic impurities on the electrical properties of CZ-grown solar grade silicon;Libal;J. Appl.Phys.,2008

3. Carrier mobilities in multi-crystalline silicon wafers made from UMG-Si;Lim;Phys. Status Solidi C,2011

4. Runyan WR, Shaffner TJ. Mobility, conductivity type, and Hall effect, in Semiconductor measurements and instrumentation (2nd ed). McGraw-Hill, New York, 1997, 141-158.

5. Klaassen DBM. A unified mobility model for device simulation-I: Model equations and concentration dependence. Solid State Electronics1992;35:953-959. .

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