SIMS study of the SiO2/Si interface and of the Si+O2 system
Author:
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference13 articles.
1. The use of secondary ion mass spectrometry for studies of oxygen adsorption and oxidation
2. Observation of an intermediate chemical state of silicon in the Si/SiO2interface by Auger sputter profiling
3. SIMS depth profiling for the characterization of Si-SiO2 structures
4. Ion-beam-induced atomic mixing at the SiO2/Si interface
5. and in Secondary ion Mass Spectrometry-SIMS III, Springer Verlag, Berlin, p. 172 (1982).
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