Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates-Reference-Cited by-同舟云学术

Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates

Published:2019-01-13 Issue:7 Volume:15 Page:1803852
ISSN:1613-6810
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language:en
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Author:

Roh Jeongkyun¹,Ryu Jae Hyeon²,Baek Geun Woo¹,Jung Heeyoung¹,Seo Seung Gi²,An Kunsik¹,Jeong Byeong Guk³,Lee Doh C.³,Hong Byung Hee⁴,Bae Wan Ki⁵,Lee Jong-Ho¹,Lee Changhee¹²^ORCID,Jin Sung Hun¹

Affiliation:

1. Department of Electrical and Computer Engineering; Inter-University Semiconductor Research Center; Seoul National University; 1 Gwanak-ro, Gwanak-gu Seoul 08826 Republic of Korea

2. Department of Electronic Engineering; Incheon National University; Academy-ro, Yeongsu-gu Incheon 22012 Republic of Korea

3. Department of Chemical and Biomolecular Engineering; Korea Advanced Institute of Science and Technology (KAIST); Daejeon 34141 Republic of Korea

4. Department of Chemistry; Seoul National University; 1 Gwanak-ro, Gwanak-gu Seoul 08826 Republic of Korea

5. SKKU Advanced Institute of Nano Technology (SAINT); Sungkyunkwan University; Seobu-ro, Jangan-gu Suwon-si 16419 Gyeonggi-do Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201803852/fullpdf

Reference59 articles.

1. MoS 2 transistors with 1-nanometer gate lengths

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4. Chemical Vapor Sensing with Monolayer MoS2

5. Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature

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