Dislocation‐Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications-Reference-Cited by-同舟云学术

Dislocation‐Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications

Published:2020-06-24 Issue:30 Volume:16 Page:1907364
ISSN:1613-6810
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language:en
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Author:

Khalilian Maryam¹^ORCID,Bi Zhaoxia¹,Johansson Jonas¹,Lenrick Filip²,Hultin Olof¹,Colvin Jovana³,Timm Rainer³^ORCID,Wallenberg Reine²,Ohlsson Jonas¹,Pistol Mats‐Erik¹,Gustafsson Anders¹,Samuelson Lars¹^ORCID

Affiliation:

1. Solid State Physics and NanoLundLund University Box 118 Lund 221 00 Sweden

2. nCHREM/Centre for Analysis and Synthesis and NanoLundLund University Box 124 Lund 221 00 Sweden

3. Synchrotron Radiation Research and NanoLundLund University Box 118 Lund 221 00 Sweden

Funder

Vetenskapsrådet

Stiftelsen för Strategisk Forskning

Knut och Alice Wallenbergs Stiftelse

Energimyndigheten

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201907364

Reference45 articles.

1. Room-temperature continuous-wave lasing in GaN/InGaN microdisks

2. GaN Photonic-Crystal Surface-Emitting Laser at Blue-Violet Wavelengths

3. A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode

4. CW lasing of current injection blue GaN-based vertical cavity surface emitting laser

5. In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers

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