Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics-Reference-Cited by-同舟云学术

Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

Published:2017-02-01 Issue:16 Volume:13 Page:1601801
ISSN:1613-6810
Container-title:Small
language:en
Short-container-title:Small

Author:

Ghoneim Mohamed Tarek¹,Hussain Muhammad Mustafa¹

Affiliation:

1. Integrated Nanotechnology Lab and Integrated Disruptive Electronic Applications (IDEA) Lab; King Abdullah University of Science and Technology; Thuwal 23955-6900 Saudi Arabia

Funder

King Abdullah University of Science and Technology

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference33 articles.

1. SCREAM I: A single mask, single-crystal silicon, reactive ion etching process for microelectromechanical structures

2. SCREAM MicroElectroMechanical Systems

3. Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

4. The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control

5. Deep reactive ion etching of Pyrex glass using SF6 plasma

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