Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures-Reference-Cited by-同舟云学术

Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

Published:2005-07 Issue:7 Volume:36 Page:673-677
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Marty F.,Rousseau L.,Saadany B.,Mercier B.,Français O.,Mita Y.,Bourouina T.

Publisher

Elsevier BV

Subject

General Engineering

Reference10 articles.

1. Franz Lärmer, Andrea Schilp, Patents DE4241045, US 5501893 and EP 625285.

2. Cryogenic dry etching for high aspect ratio microstructures;Murakami,1993

3. Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures;de Boer;IEEE/ASME Journal of Microelectromechanical Systems,2002

4. A MEMS tunable optical filter based on vertical DBR architecture;Saadany,2004

5. Design of a MEMS tunable optical filter based on a novel DBR vertical architecture;Saadany,2003

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