Room-Temperature Solution-Synthesized p-Type Copper(I) Iodide Semiconductors for Transparent Thin-Film Transistors and Complementary Electronics
Author:
Affiliation:
1. Department of Energy and Materials Engineering; Dongguk University; 30 Pildong-ro, 1-gil, Jung-gu Seoul 04620 Republic of Korea
2. Department of Chemistry; Chung-Ang University; Seoul 06974 Republic of Korea
Funder
Ministry of Science, ICT and Future Planning
Korea government
Center for Advanced Soft-Electronics
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201802379/fullpdf
Reference50 articles.
1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
2. Solution-processable metal oxide semiconductors for thin-film transistor applications
3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
4. p-channel thin-film transistor using p-type oxide semiconductor, SnO
5. Solution-processed oxide semiconductor SnO in p-channel thin-film transistors
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