Enhanced Performance of P-Channel CuIBr Thin-Film Transistor by ITO Surface Charge-Transfer Doping-Reference-Cited by-同舟云学术

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Enhanced Performance of P-Channel CuIBr Thin-Film Transistor by ITO Surface Charge-Transfer Doping

Published:2024-07-29 Issue:31 Volume:16 Page:41176-41184
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Gao Ming¹,Wei Wei¹^ORCID,Wang Zhiyong¹,Yu Zhi Gen²^ORCID,Zhang Yong-Wei²^ORCID,Zhu Chunxiang¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, College of Design and Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore

2. Agency for Science, Technology and Research (A*STAR), Institute of High Performance Computing, 1 Fusionopolis Way, No. 16-16 Connexis, Singapore 138632, Singapore

Funder

Agency for Science, Technology and Research

Ministry of Education - Singapore

National University of Singapore

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c07955

Reference43 articles.

1. Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

2. Room-Temperature Solution-Synthesized p-Type Copper(I) Iodide Semiconductors for Transparent Thin-Film Transistors and Complementary Electronics

3. Ultrahigh-Mobility and Solution-Processed Inorganic P-Channel Thin-Film Transistors Based on a Transition-Metal Halide Semiconductor

4. High-performance p-channel transistors with transparent Zn doped-CuI

5. Transparent, P‐channel CuISn Thin‐film Transistor with Field Effect Mobility of 45 cm ² V ^–1 s ^–1 and Excellent Bias Stability

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