Ambipolar Triple Cation Perovskite Field Effect Transistors and Inverters-Reference-Cited by-同舟云学术

Ambipolar Triple Cation Perovskite Field Effect Transistors and Inverters

Published:2016-12-05 Issue:8 Volume:29 Page:1602940
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Yusoff Abd. Rashid bin Mohd.¹²,Kim Hyeong Pil²,Li Xiuling²,Kim Jeongmo²,Jang Jin²,Nazeeruddin Mohammad Khaja¹

Affiliation:

1. Group for Molecular Engineering of Functional Materials; Institute of Chemical Sciences and Engineering; École Polytechnique Fédérale de Lausanne; Lausanne CH-1015 Switzerland

2. Advanced Display Research Center; Department of Information Display; Kyung Hee University; Dongdaemoon-gu 130-701 Seoul Korea

Funder

Seventh Framework Programme

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference21 articles.

1. Efficient Hybrid Solar Cells Based on Meso-Superstructured Organometal Halide Perovskites

2. Electron-Hole Diffusion Lengths Exceeding 1 Micrometer in an Organometal Trihalide Perovskite Absorber

3. Long-Range Balanced Electron- and Hole-Transport Lengths in Organic-Inorganic CH 3 NH 3 PbI 3

4. Intrinsic Thermal Instability of Methylammonium Lead Trihalide Perovskite

5. Inorganic caesium lead iodide perovskite solar cells

Cited by 140 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced formation mechanism in microwave-assisted triple cation perovskites for stable ambient-fabricated perovskite transistors;Photonics for Solar Energy Systems X;2024-06-18

2. High-performance tin perovskite transistors through formate pseudohalide engineering;Materials Science and Engineering: R: Reports;2024-06

3. Functional impact of gate dielectrics in emerging metal halide perovskite field-effect transistors;Materials Today Physics;2024-06

4. Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits;Nature Electronics;2024-05-21

5. Ion Migration in Metal Halide Perovskite Field-Effect Transistors;ACS Applied Electronic Materials;2024-04-26