Ion Migration in Metal Halide Perovskite Field-Effect Transistors-Reference-Cited by-同舟云学术

Ion Migration in Metal Halide Perovskite Field-Effect Transistors

Published:2024-04-26 Issue:5 Volume:6 Page:3039-3061
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Cheng Peng¹,Liu Guohua¹,Dong Xue¹,Zhou Yipeng¹,Ran Chenxin¹^ORCID,Wu Zhongbin¹^ORCID

Affiliation:

1. Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, 127 West Youyi Road, Xi’an 710072, P. R. China

Funder

Natural Science Foundation of Ningbo Municipality

Natural Science Basic Research Program of Shaanxi Province

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Key Research and Development Projects of Shaanxi Province

Shccig-Qinling Program

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01394

Reference132 articles.

1. Compositional engineering of perovskite materials for high-performance solar cells

2. Atomistic Origins of High-Performance in Hybrid Halide Perovskite Solar Cells

3. Long-Range Balanced Electron- and Hole-Transport Lengths in Organic-Inorganic CH 3 NH 3 PbI 3

4. Electron-Hole Diffusion Lengths Exceeding 1 Micrometer in an Organometal Trihalide Perovskite Absorber

5. Formamidinium Lead Halide Perovskite Crystals with Unprecedented Long Carrier Dynamics and Diffusion Length

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Organic Surface Doping for High‐Performance Perovskite Transistors;Advanced Functional Materials;2024-08-29

2. Perovskite Field-Effect Transistor Memory Employing a Large Grain Sized α-Phase Formamidinium Lead Triiodide;ACS Applied Electronic Materials;2024-08-27