Response to “Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM”-Reference-Cited by-同舟云学术

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Response to “Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM”

Published:2012-10-19 Issue:2 Volume:25 Page:165-167
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Liu Qi,Jun Sun,Lv Hangbing,Long Shibing,Li Ling,Yin Kuibo,Wan Neng,Li Yingtao,Sun Litao,Liu Ming

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201203771/fullpdf

Reference20 articles.

1. Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Electrochemical metallization memories—fundamentals, applications, prospects

4. Observation of conducting filament growth in nanoscale resistive memories

5. Mechanism for resistive switching in an oxide-based electrochemical metallization memory

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3. Bipolar resistive switching memory behaviors of the micro-size composite particles;Composite Structures;2017-04

4. A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells;Current Applied Physics;2017-02

5. Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium–Tin-Oxide Electrode;IEEE Transactions on Electron Devices;2016-12

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