Electromagnetic Functionalization of Wide-Bandgap Dielectric Oxides by Boron Interstitial Doping-Reference-Cited by-同舟云学术

Electromagnetic Functionalization of Wide-Bandgap Dielectric Oxides by Boron Interstitial Doping

Published:2018-08-21 Issue:39 Volume:30 Page:1802025
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Park Dae-Sung¹²^ORCID,Rees Gregory J.³,Wang Haiyuan⁴,Rata Diana²,Morris Andrew J.⁵,Maznichenko Igor V.²,Ostanin Sergey²⁶,Bhatnagar Akash¹²,Choi Chel-Jong⁷,Jónsson Ragnar D. B.⁸,Kaufmann Kai⁹,Kashtiban Reza³,Walker Marc³,Chiang Cheng-Tien²⁶,Thorsteinsson Einar B.⁸,Luo Zhengdong³,Park In-Sung¹⁰,Hanna John V.³,Mertig Ingrid²⁶,Dörr Kathrin²,Gíslason Hafliði P.⁸,McConville Chris F.³¹¹

Affiliation:

1. Zentrum für Innovationskompetenz SiLi-nano; 06120 Halle Germany

2. Institut für Physik; Martin-Luther-Universität Halle-Wittenberg; 06120 Halle Germany

3. Department of Physics; University of Warwick; Coventry CV4 7AL UK

4. Fritz-Haber-Institut der Max-Planck-Gesellschaft; 14195 Berlin Germany

5. School of Metallurgy and Materials; University of Birmingham; B15 2TT Birmingham UK

6. Max-Planck-Institut für Mikrostrukturphysik; 06120 Halle Germany

7. School of Semiconductor and Chemical Engineering; Chonbuk National University; Jeonju 54596 Republic of Korea

8. Science institute; University of Iceland; Reykjavik IS-104 Iceland

9. Fraunhofer Center for Silicon Photovoltaics CSP; Halle 06120 Germany

10. Institute of Nano Science and Technology; Hanyang University; Seoul 04763 Republic of Korea

11. College of Science; Engineering & Health; RMIT University; Melbourne VIC 3000 Australia

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201802025/fullpdf

Reference46 articles.

1. Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O Films

2. MgxZn1−xO as a II–VI widegap semiconductor alloy

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4. Epitaxial BiFeO 3 Multiferroic Thin Film Heterostructures

5. Room-temperature ferroelectricity in strained SrTiO3

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