Aerosol Jet Printed, Sub-2 V Complementary Circuits Constructed fromP- andN-Type Electrolyte Gated Transistors-Reference-Cited by-同舟云学术

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Aerosol Jet Printed, Sub-2 V Complementary Circuits Constructed fromP- andN-Type Electrolyte Gated Transistors

Published:2014-06-27 Issue:41 Volume:26 Page:7032-7037
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Hong Kihyon¹,Kim Yong Hyun¹,Kim Se Hyun²,Xie Wei¹,Xu Weichao David³,Kim Chris H.³,Frisbie C. Daniel¹

Affiliation:

1. Department of Chemical Engineering and Materials Science; University of Minnesota; 421 Washington Ave. SE. Minneapolis MN 55455 USA

2. Department of Advanced Organic Materials Engineering; Yeungnam University; 280 Daehak-ro Gyeongsan 712-749 Korea

3. Department of Electrical and Computer Engineering; University of Minnesota; 200 Union Street SE Minneapolis MN 55455 USA

Funder

Office of Naval Research

Air Force Office of Scientific Research

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference27 articles.

1. Polyelectrolyte-Gated Organic Complementary Circuits Operating at Low Power and Voltage

2. High transconductance organic electrochemical transistors

3. Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic

4. Channel Length Scaling of MoS2MOSFETs

5. Organic Thin-Film Transistors for Chemical and Biological Sensing

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