Nanometer-Scale Phase Transformation Determines Threshold and Memory Switching Mechanism-Reference-Cited by-同舟云学术

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Nanometer-Scale Phase Transformation Determines Threshold and Memory Switching Mechanism

Published:2017-06-12 Issue:30 Volume:29 Page:1701752
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Chae Byeong-Gyu¹,Seol Jae-Bok²,Song Jeong-Hwan¹,Baek Kyungjoon¹³,Oh Sang-Ho¹³,Hwang Hyunsang¹,Park Chan-Gyung¹²

Affiliation:

1. Department of Materials Science and Engineering; POSTECH; Pohang 37673 South Korea

2. National Institute for Nanomaterials Technology (NINT); POSTECH; Pohang 37673 South Korea

3. Department of Energy Science; Sungkyunkwan University; Suwon 16419 South Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference36 articles.

1. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

2. Overview of candidate device technologies for storage-class memory

3. Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

4. Cation-based resistance change memory

5. Nanoionics-based resistive switching memories

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