Room-Temperature Photoconductivity Far Below the Semiconductor Bandgap-Reference-Cited by-同舟云学术

Room-Temperature Photoconductivity Far Below the Semiconductor Bandgap

Published:2014-09-01 Issue:38 Volume:26 Page:6594-6598
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Huang Zhiming¹²,Tong Jinchao¹,Huang Jingguo¹,Zhou Wei¹,Wu Jing¹,Gao Yanqing¹,Lu Jinxing¹,Lin Tie¹,Wei Yanfeng¹,Chu Junhao¹

Affiliation:

1. National Laboratory for Infrared Physics; Shanghai Institute of Technical Physics; Chinese Academy of Sciences; 500 Yu Tian Road Shanghai 200083 PR China

2. Key laboratory of Space Active Opto-Electronics Technology; Shanghai Institute of Technical Physics; Chinese Academy of Sciences; 500 Yu Tian Road Shanghai 200083 PR China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference28 articles.

1. CMOS-compatible graphene photodetector covering all optical communication bands

2. Single-photon detectors for optical quantum information applications

3. Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna

4. CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band

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