Affiliation:
1. Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences 1 Sub‐Lane Xiangshan Hangzhou 310024 P. R. China
2. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 P. R. China
3. University of Chinese Academy of Sciences 19 Yu Quan Road Beijing 100049 P. R. China
Abstract
AbstractBroadband room‐temperature photodetection has become a pressing need as application requirements for communication, imaging, spectroscopy, and sensing have evolved. Topological insulators (TIs) have narrow bandgap structures with a wide absorption spectral response range, which should meet the requirements of broadband detection. However, owing to their high carrier concentration and low carrier mobility resulting in poor noise equivalent power (NEP), they are generally considered unsuitable for photodetection. Here, InBiTe3 alloy nanosheet formed by doping In2Te3 into Bi2Te3(≈ 1:1) is utilized, effectively improving carrier mobility by over ten times while maintaining a narrow bandgap structure, to fabricate a broadband photodetector covering a wide response range from visible to millimeter wave (MMW). Under the synergistic multi‐mechanism of the photoelectric effect in the visible−infrared region and the electromagnetic‐induced potential well (EIW) effect in Terahertz band, the performance of NEP = 75 pW Hz−1/2 and response time τ ≈100 µs in visible to infrared band and the performance of NEP = 6.7 × 10−3 pW Hz−1/2, τ ≈8 µs in Terahertz region are achieved. The results demonstrate the promising prospects of topological insulator alloy (like InBiTe3) nanosheet in optoelectronic detection applications and provide a direction for the research into high‐performance broadband photoelectric detectors via TIs.
Funder
National Natural Science Foundation of China
Chinese Academy of Sciences
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献