Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air-Reference-Cited by-同舟云学术

Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air

Published:2016-05-12 Issue:30 Volume:28 Page:6465-6470
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Fonseca Jose J.¹²,Tongay Sefaattin¹,Topsakal Mehmet³,Chew Annabel R.⁴,Lin Alan J.¹²,Ko Changhyun¹,Luce Alexander V.¹²,Salleo Alberto⁴,Wu Junqiao¹²,Dubon Oscar D.¹²

Affiliation:

1. Department of Materials Science and Engineering University of California Berkeley CA 94720 USA

2. Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

3. Department of Chemical Engineering and Materials Science University of Minnesota MN 55455 USA

4. Department of Materials Science and Engineering Stanford University Palo Alto CA 94305 USA

Funder

Division of Graduate Education

U.S. Department of Energy

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201601151

Reference41 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Single-layer MoS2 transistors

3. Magnetic properties of MoS2: Existence of ferromagnetism

4. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

5. Size-induced effects in gallium selenide electronic structure: The influence of interlayer interactions

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