Oxidation effect on the ultrafast carrier dynamics of GaTe studied by terahertz spectroscopy

Author:

Li Hong12ORCID,Wang Qiao3,Li Qibing12,Zhang Kai12,Li Enen12456,Wang Tianwu12456ORCID,Fang Guangyou12456,Wu Yirong1256,Hu Ping-An3

Affiliation:

1. GBA Branch of Aerospace Information Research Institute

2. Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics

3. Harbin Institute of Technology

4. Key Laboratory of Electromagnetic Radiation and Sensing Technology

5. University of Chinese Academy of Sciences

6. Aerospace Information Research Institute

Abstract

Effect of oxygen on the physical properties of GaTe is investigated by optical pump–terahertz probe spectroscopy. Oxygen erosion in GaTe leads to significant reductions in lifetime and transient conductivity. Terahertz emission is also evaluated. Terahertz radiation intensity gradually dies away with increasing air exposing time. Such phenomena are attributed to the trapping of photogenerated carriers by oxygen–introduced defects, which can result in the reduction of the carrier density, acceleration of the photocarrier relaxation, and impediment of the terahertz emission.

Funder

Science and Technology Planning Project of Guangdong Province

National Natural Science Foundation of China

The Key Research and Development Program of Guangdong Province

The Guangzhou basic and applied basic research Project

Publisher

Optica Publishing Group

Subject

Electronic, Optical and Magnetic Materials

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