Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap-Reference-Cited by-同舟云学术

Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap

Published:2014-04-23 Issue:5 Volume:7 Page:694-703
ISSN:1998-0124
Container-title:Nano Research
language:en
Short-container-title:Nano Res.

Author:

Hu Pingan,Zhang Jia,Yoon Mina,Qiao Xiao-Fen,Zhang Xin,Feng Wei,Tan Pingheng,Zheng Wei,Liu Jingjing,Wang Xiaona,Idrobo Juan C.,Geohegan David B.,Xiao Kai

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,General Materials Science,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/s12274-014-0430-2.pdf

Reference35 articles.

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3. Huang, X.; Zeng, Z. Y.; Zhang, H. Metal dichalcogenide nanosheets: Preparation, properties and applications. Chem. Soc. Rev. 2013, 42, 1934–1946.

4. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L. J.; Loh, K. P.; Zhang, H. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 2013, 5, 263–275.

5. Zeng, Z. Y.; Yin, Z. Y.; Huang, X.; Li, H.; He, Q. Y.; Lu, G.; Boey, F.; Zhang, H. Single-layer semiconducting nanosheets: High-yield preparation and device fabrication. Angew. Chem. Int. Ed. 2011, 50, 11093–11097.

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