Reversible and Precisely Controllable p/n‐Type Doping of MoTe 2 Transistors through Electrothermal Doping-Reference-Cited by-同舟云学术

Reversible and Precisely Controllable p/n‐Type Doping of MoTe 2 Transistors through Electrothermal Doping

Published:2018-02-12 Issue:13 Volume:30 Page:1706995
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Chang Yuan‐Ming¹,Yang Shih‐Hsien²,Lin Che‐Yi³,Chen Chang‐Hung¹,Lien Chen‐Hsin²,Jian Wen‐Bin³,Ueno Keiji⁴,Suen Yuen‐Wuu¹,Tsukagoshi Kazuhito⁵,Lin Yen‐Fu¹^ORCID

Affiliation:

1. Department of PhysicsNational Chung Hsing University Taichung 40227 Taiwan

2. Department of Electrical Engineering and Institute of Electronic EngineeringNational Tsing Hua University Hsinchu 30071 Taiwan

3. Department of ElectrophysicsNational Chiao Tung University Hsinchu 30010 Taiwan

4. Department of ChemistryGraduate School of Science and EngineeringSaitama University Saitama 338‐8570 Japan

5. WPI Center for Materials Nanoarchitechtonics (WPI‐MANA)National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 Japan

Funder

Ministry of Science and Technology, Taiwan

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201706995

Reference50 articles.

1. Spin qubits in graphene quantum dots

2. Large-scale pattern growth of graphene films for stretchable transparent electrodes

3. Chemical Self-Doping of Organic Nanoribbons for High Conductivity and Potential Application as Chemiresistive Sensor

4. Metal-Free Doping Process to Enhance the Conductivity of Zinc Oxide Nanorods Retaining the Transparency

5. Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping

Cited by 76 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microwave-Assisted Synthesis of MnSeTe Nanocomposite Flowers for Optoelectronic and Photoresponse Applications;ACS Applied Nano Materials;2024-09-13

2. Channel-bias-controlled reconfigurable silicon nanowire transistors via an asymmetric electrode contact strategy;Chip;2024-09

3. LAB-to-FAB Transition of 2D FETs: Available Strategies and Future Trends;Nanomaterials;2024-07-23

4. P/N-Type Conversion of 2D MoTe₂ Controlled by Top Gate Engineering for Logic Circuits;ACS Applied Materials & Interfaces;2024-07-08

5. Defect Engineering of MoTe₂ via Thiol Treatment for Type III van der Waals Heterojunction Phototransistor;ACS Nano;2024-07-03