Defect Engineering of MoTe<sub>2</sub> via Thiol Treatment for Type III van der Waals Heterojunction Phototransistor-Reference-Cited by-同舟云学术

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Defect Engineering of MoTe₂ via Thiol Treatment for Type III van der Waals Heterojunction Phototransistor

Published:2024-07-03 Issue:28 Volume:18 Page:18334-18343
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Jeong Yeonsu¹^ORCID,Han Bin¹,Tamayo Adrián¹,Claes Nathalie²,Bals Sara²^ORCID,Samorì Paolo¹^ORCID

Affiliation:

1. University of Strasbourg, CNRS, Institut de Science et d’Ingénierie Supramoléculaires, UMR 7006, 8 Allée Gaspard Monge, Strasbourg 67000, France

2. Electron Microscopy for Materials Science (EMAT) and NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, Antwerp 2020, Belgium

Funder

Agence Nationale de la Recherche

HORIZON EUROPE European Innovation Council

National Research Foundation of Korea

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c02207

Reference47 articles.

1. Single-layer MoS2 transistors

2. Molecular Functionalization of Chemically Active Defects in WSe 2 for Enhanced Opto‐Electronics

3. 2D Layered Material-Based van der Waals Heterostructures for Optoelectronics

4. Structural Phase Transition and Interlayer Coupling in Few-Layer 1T′ and Td MoTe2

5. Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

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