Maximizing Integrated Optical and Electrical Properties of a Single ZnO Nanowire through Native Interfacial Doping-Reference-Cited by-同舟云学术

Maximizing Integrated Optical and Electrical Properties of a Single ZnO Nanowire through Native Interfacial Doping

Published:2014-01-22 Issue:19 Volume:26 Page:3035-3041
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Ding Huaiyi¹,Pan Nan¹²,Ma Chao³,Wu Yukun¹,Li Junwen¹,Cai Hongbing¹,Zhang Kun¹,Zhang Guanghui¹,Ren Wenzhen¹,Li Jianqi³,Luo Yi¹⁴²,Wang Xiaoping¹²,Hou J. G.¹²

Affiliation:

1. Hefei National Laboratory for Physical Sciences at the Microscale; University of Science and Technology of China; Hefei Anhui 230026 P.R. China

2. Synergetic Innovation Center of Quantum Information & Quantum Physics; University of Science and Technology of China; Hefei Anhui 230026 P.R. China

3. Beijing National Laboratory for Condensed Matter Physics; Institute of Physics; Chinese Academy of Sciences; Beijing 100190 P.R. China

4. Department of Theoretical Chemistry and Biology; School of Biotechnology; Royal Institute of Technology; S-10691 Stockholm Sweden

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201305340/fullpdf

Reference38 articles.

1. Room-Temperature Ultraviolet Nanowire Nanolasers

2. Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN

3. Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays