Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays-Reference-Cited by-同舟云学术

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Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays

Published:2010-10-12 Issue:11 Volume:10 Page:4387-4393
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chen Min-Teng¹,Lu Ming-Pei²,Wu Yi-Jen¹,Song Jinhui³,Lee Chung-Yang¹,Lu Ming-Yen¹,Chang Yu-Cheng¹,Chou Li-Jen¹,Wang Zhong Lin³,Chen Lih-Juann¹

Affiliation:

1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30043 Republic of China

2. National Nano Device Laboratories, Hsinchu, Taiwan 30078, Republic of China

3. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl101907h

Reference41 articles.

1. The future of ultraviolet LEDs

2. Room-Temperature Ultraviolet Nanowire Nanolasers

3. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers

4. Ultraviolet Emission from a Diamond pn Junction

5. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal

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